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| geometry process details principal device types 2n2905a 2n2907a cmpt2907a cmst2907a cxt2907a czt2907a pn2907a gross die per 5 inch wafer 45,900 process CP591X small signal transistor pnp - amp/switch transistor chip process epitaxial planar die size 19 x 19 mils die thickness 5.9 mils base bonding pad area 3.5 x 4.3 mils emitter bonding pad area 3.5 x 4.5 mils top side metalization al - 13,000? back side metalization au - 18,000? backside collector r1 www.centralsemi.com r2 (10-february 2011)
process CP591X typical electrical characteristics www.centralsemi.com r2 (10-february 2011) |
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